Topdiode IGBT and MOSFET drivers

Topdiode offers ultrafast single and dual low-side IGBT and MOSFET drivers from 1.5A to 30A peak drive current in various packages including 5-pin TO-220 and TO-263 power packages.

The broad range of high-side and low-side, half-bridge, and 3-phase drivers

A gate driver serves as a potent power amplifier, transforming a low-power input from a controller IC into a robust, high-current drive input for the gate of a high-power transistor like an Insulated-Gate Bipolar Transistor (IGBT) or a power MOSFET. This augmentation is particularly advantageous for MOSFET functionality, as the amplified drive significantly reduces the transition time between gate ON/OFF states, resulting in heightened power output and thermal efficiency.

These high-voltage, high-side, and low-side drivers are specified over a wide temperature range (-40°C <TJ <125 °C) and can operate with an input voltage up to 600 V, easing time and effort of design. All the devices feature a dv/dt immunity of 50 V/ns and are 3.3 V and 5 V input logic compatible. These devices use the bootstrap technique to ensure a proper drive of the high-side power switch and provide rugged design.

Key players operating in the global MOSFET and lGBT gate drivers market are Infineon Technologies, ON Semiconductor, STMicroelectronic, ROHM Semiconductor,NXP Semiconductors, Texas Instruments，, Microchip, Power Integrations Inc.,Vishay, Broadcom, Analog Devices, IXYS, Toshiba,Renesas, and Powerex.

Topdiode Cross Parts

Topdiode with a range spanning from Single Channel Gate Drivers, Half Bridge Gate Drivers, Full Bridge Gate Drivers, Three Phase Gate Drivers, and have cross for Infineon, IXYS, ONSEMI, TI Brand

Applications

✱ Bridge inverter for UPS systems

✱ High power energy management

✱ Half-bridge power converters

✱ Full-bridge converters

✱ Any complementary drive converters (asymmetrical half-bridge, active clamp)

MOSFET and IGBT FAQs

Q1: What is power MOSFET and IGBT?

Answer: MOSFETs (Metal-Oxide-Semiconductor Field-Effect Transistors) and IGBTs (Insulated-Gate Bipolar Transistors) serve as power transistors employed for output control in numerous servo drives. These three-terminal power semiconductor devices are utilized for both signal switching and amplification.

Q2: What is the difference between MOSFET driver and IGBT driver?

Answer: In high-current regions, the IGBT demonstrates a lower on-state voltage compared to the MOSFET, especially at elevated temperatures. IGBTs are typically employed at switching frequencies below 20 kHz due to their higher switching losses compared to unipolar MOSFETs

For further question or inquiries, please kindly contact Loie: sales4@topdiode.com, thanks