What Is Silicon Carbide (SiC) MOSFET?

What is SiC?

 

Silicon carbide (SiC), a semiconductor compound consisting of silicon (Si) and carbon (C), belongs to the wide bandgap (WBG) family of materials. Its physical bond is very strong, giving the semiconductor a high mechanical, chemical and thermal stability.

The wide band gap and high thermal stability allow SiC devices to be used at junction temperatures higher than those of silicon, even over 200°C. The main advantage offered by silicon carbide in power applications is its low drift region resistance, which is a key factor for high-voltage power devices.

Introduction of Silicon Carbide (SiC) MOSFETs

 

MOSFETs are metal–oxide–semiconductor field-effect transistors with insulated gates. These silicon carbide MOSFETs have a higher blocking voltage and higher thermal conductivity than silicon MOSFETs, despite having similar design elements. SiC power devices also have a lower state resistance and 10 times the breakdown strength of regular silicon.

In general, Systems with SiC MOSFETs have better performance and increased efficiency when compared to MOSFETs made with silicon material.

What are Features of SiC MOSFET?

 

Main features of Topdiode SiC MOSFETs include:

Very high temperature handling capability (max. TJ = 200 °C)

Very high switching frequency operation and very low switching losses.

Low on-state resistance.

What are Applications of SiC MOSFET?

 

Highly reliable products with high performance and robustness

Different solutions able to cover a wide range of applications

• NETCOM Server
• Home appliances
• Photovoltaic Industrial drives
• Power supply / ups Energy storage
• Charging station
• Rail traction
• Smart Power
• Grid Wind mills
• HEV / BEV

 

What are Benefits of Topdiode SiC MOSFET?

 

There are many advantages to choosing SiC MOSFETs over silicon MOSFETs, such as higher switching frequencies. High-temperature development is also not a concern when using SiC MOSFET modules because these devices can operate efficiently even in high heat.

Additionally, with SiC MOSFETs, you benefit from a more compact product size because all components (inductors, filters, etc.) are smaller.

Also Topdiode SiC MOSFET could replace Infineon, On Semi, ROHM etc. with reliable quality, much less cost and lead-time. Our customers will benefits a lot by choosing us as their supplier.

 

Topdiode SiC MOSFET Introduction

 

Topdiode SiC MOSFET Silicon Carbide MOSFET solutions are the next essential step towards an energy-smart world. Topdiode SiC MOSFET technology represents the best performance, reliability, and ease of use for system designers.

Silicon Carbide (SiC) power transistors open up new degrees of flexibility for designers to harness never before seen levels of efficiency and reliability. High voltage SiC MOSFET technology has also provided impressive improvements in reverse-recovery characteristics.

Topdiode SiC MOSFETs are designed to be fast and rugged and include system benefits from high efficiency to reduced system size and cost. Topdiode MOSFETs are metal oxide semiconductor field-effect transistors with insulated gates. These silicon carbide MOSFETs have a higher blocking voltage and higher thermal conductivity than silicon MOSFETs, despite having similar design elements.

SiC power devices also have a lower state resistance and 10 times the breakdown strength of regular silicon. In general, Systems with SiC MOSFETs have better performance and increased efficiency when compared to MOSFETs made with silicon material.

Topdiode SiC MOSFET Advantages

 

There are many advantages to choosing SiC MOSFETs over silicon MOSFETs, such as higher switching frequencies. High-temperature development is also not a concern when using SiC MOSFET modules because these devices can operate efficiently even in high heat. Additionally, with SiC MOSFETs, you benefit from a more compact product size because all components (inductors, filters, etc.) are smaller.

 

Topdiode SiC MOSFET offers a series of advantages. These include the lowest gate charge and device capacitance levels seen in SiC switches, no reverse recovery losses of the anti-parallel diode, temperature-independent low switching losses, and threshold-free on-state characteristics.

 

Superior gate oxide reliability enabled by state-of-the-art trench design, best in class switching and conduction losses, highest transconductance level (gain), a threshold voltage of Vth = 4V and short-circuit robustness. This is the revolution you can rely on.

 

All this results in a robust Silicon Carbide MOSFET technology, ideal for hard- and resonant-switching topologies like LLC and ZVS, which can be driven like an IGBT or MOSFET with easy-to-use drivers. Delivering the highest-level efficiency at high switching frequencies allowing for system size reduction, power density increases, and high lifetime reliability.

 

Topdiode SiC MOSFET Cross Guide