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About Schottky Barrier Rectifiers

In the most basic sense, a Schottky barrier rectifier (or simply Schottky diode) operates in the same manner as a typical semiconductor diode made from Si or Ge. However, its primary purpose is to provide rectification, i.e., allow current to flow only easily along one specific direction. In this way, they are used in typical DC circuits to enable or block current or in AC circuits as part of wave shaping.

About Schottky Barrier Rectifiers

Structure

The major differences between a Schottky diode include their forward operating characteristics and, most importantly, their structure. Schottky diodes are constructed by depositing a metal electrical contact on a semiconductor; although n-type or p-type materials can be used in Schottky diodes, n-type materials are normally preferred. The reason is that p-type semiconductor Schottky diodes will have lower forward voltage and thus larger reverse bias breakdown current; using an n-type material provides the best balance between forward voltage and reverse bias current. On the other ends of the component, Ohmic contacts are placed to provide non-rectifying connections to the semiconductor.

Schottky barrier rectifier structure.
Schottky barrier rectifier structure.

 

Advantages

Compared to p-n junction diodes, Schottky barrier rectifiers have some advantages that make them more useful in switching, high-frequency rectification, and wave shaping applications. Some of the main advantages of Schottky diodes include:

1, Narrow depletion region: When forward biased, a Schottky diode will have a smaller depletion region than in a p-n diode. As a result, the junction capacitance is very low, and a Schottky diode can be switched between forward and reverse biases very quickly.

2, Lower forward voltage: A Schottky diode’s forward voltage is determined by its built-in voltage, which can be as low as 0.2 to 0.3 V. For comparison, Si p-n diodes have forward voltages of approximately 0.6 to 0.7 V, so they produce less current in forward bias.

3, Low ideality factor: Schottky diodes tend to have low ideality factor, with values as low as 1.04 being common in commercially available components.

4, Less noise: A Schottky diode will have lower nonlinear impedance in forward bias, producing less unwanted thermal noise than a typical p-n junction diode. This is one reason Schottky diodes are useful in microwave devices.

As shown below, the electrical advantages can be seen when comparing IV curves for a Si p-n diode and a Schottky diode. From here, we can see that the larger reverse bias current behavior leads to slower roll-off into the breakdown region, rather than fast avalanche behavior seen in a p-n diode.

IV curves (left) and forward voltage behavior (right) for Si p-n diodes and Schottky diodes.
IV curves (left) and forward voltage behavior (right) for Si p-n diodes and Schottky diodes.

 

Conclusion

Schottky Barrier Diodes offer several advantages over traditional PN-junction diodes, including low forward voltage drop, fast switching speed, low reverse recovery time, high efficiency, and high-temperature operation. These characteristics make Schottky diodes an excellent choice for a wide range of applications, particularly in high-frequency and power-sensitive circuits.

 

Topdiode produces high-quality Schottky Barrier Rectifiers for crossover,  we have replacements for Nexperia, Diodes, SEMTECH & On-semi, please check below:

 

Topdiode PN Package Cross to Brand Pin to Pin Cross to P/N
TPDA10S65C1P TO-220-2 Infineon IDH10SG60C
TPDA15S65C1P TO-220-2 Infineon IDH16G65C6
TPDB20A65C1P TO-220-3 On Semi FFSP2065BDN-F085
TPDD20A120C1P TO-247-3 Infineon IDW20G65C5B
TPDD20A65C1P TO-247-3 Infineon IDW20G65C5B
TPDD30A65C1P TO-247-3 Infineon IDW32G65C5B
TPDD40A120C1P TO-247-3 On Semi FFSH40120ADN-F155
TPDG10S65C1P TO-252 Infineon IDK10G65C5

 

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