Silicon Carbide Schottky Diode TPDH10S170C1P Highlights

Silicon Carbide Schottky Diode (SIC Schottky Diode) is a high-performance semiconductor device with the advantages of low turn-on voltage, high-speed switching, high-temperature performance, etc. It is widely used in power supplies, drives, inverters, electric vehicles and other fields.

TOPDIODE TPDH10S170C1P 1700V 10A SiC diode is an ultrahigh performance power Schottky diode designed for power electronics systems, where high efficiency and high reliability are required.

Silicon Carbide Schottky Diode Main features:

High switching speed: The switching speed of silicon carbide Schottky diodes is more than 10 times faster than traditional silicon Schottky diodes, and high-frequency switching can be achieved.

Low leakage current: Silicon carbide Schottky diodes have leakage currents that are orders of magnitude lower than traditional silicon Schottky diodes, allowing for higher efficiencies.

High operating temperature: Silicon carbide Schottky diodes can operate in high temperature environments, and the maximum operating temperature can reach over 400°C.

Large voltage resistance: Silicon carbide Schottky diodes have higher voltage resistance and can withstand higher voltages.

Application areas:

• Switching Power Supplies: Used in boost diode or switch mode power supply applications.
• Electric and hybrid vehicles: Applications in vehicle electrical systems.
• Renewable energy systems: as in solar inverters.
• Consumer Electronics: In power management of various consumer electronic products.
• Industrial Automation and Motor Control: For motor drives and controls.
• LED lighting: In the power conversion of LED lighting equipment.
• Communication equipment: In power management of communication equipment.
• Household appliances: In the power supply system of household appliances.
• Medical Devices: In Power Management of Medical Devices.

TOPDIDOE TPDH10S170C1P

TOPDIDOE TPDH10S170C1P is RoHS compliant, has a positive temperature coefficient for safe operation, and is easy to use in parallel. Due to their fast switching performance and excellent surge suppression, switching losses can be significantly reduced compared to silicon bipolar diodes. Topdiode TPDH10S170C1P is also a nice alternative offer for Littelfuse SiC Schottky barrier diodes LSIC2SD170B10.

Topdiode 1700V 10A Silicon Carbide (SiC) Schottky Diode TPDH10S170C1P DATA

Summarize

Topdiode’s TPDH10S170C1P is ideally suited for applications requiring high reliability and efficiency due to the high efficiency and high temperature performance of its silicon carbide material. With the continuous development of Topdiode silicon carbide technology, the performance of silicon carbide Schottky diodes will continue to improve and its application areas will be further expanded.

If you want to explore more (SiC) Schottky Diodes,

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